Journal
RSC ADVANCES
Volume 5, Issue 5, Pages 3636-3641Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra11924j
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Funding
- National Natural Science Foundation of China [51372135]
- Ministry of Education of the People's Republic of China [113007A]
- Tsinghua University Initiative Scientific Research Program
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Undoped ZrO2 thin films are prepared on < 100 > Si substrates by reactive DC magnetron sputtering using a Zr target. By controlling the oxygen partial pressure during the deposition process, we can successfully control the phase structure of the as-deposited film, which can be tetragonal, monoclinic or a mixture of them. A magnetic property measurement reveals that phase-dependent d(0) ferromagnetism exists in ZrO2 thin films. Specifically, only tetragonal ZrO2 thin films can be room-temperature ferromagnetic. Photoluminescence measurements, X-ray photoelectron spectroscopy analyses and post thermal annealing experiments suggest the d(0) ferromagnetism in undoped tetragonal ZrO2 films is mainly driven by oxygen vacancies.
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