Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: the advantages of the extended Full Spectrum protocol

Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

(2010) David Cooper et al.   APPLIED PHYSICS LETTERS

A method to determine the interface position and layer thickness in SIMS depth profiling of multilayer films

(2010) Kyung Joong Kim et al.   METROLOGIA

High depth resolution analysis of Si/SiGe multilayers with the atom probe

(2009) Sebastian Koelling et al.   APPLIED PHYSICS LETTERS

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs

(2009) Leonardo Gomez et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ion yields and erosion rates for Si1−xGex(0≤x≤1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV

(2009) R. J. H. Morris et al.   JOURNAL OF APPLIED PHYSICS

Roughness development in the depth profiling with 500eV O2+ beam with the combination of oxygen flooding and sample rotation

(2008) D. Gui et al.   APPLIED SURFACE SCIENCE

Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS

(2008) D. Marseilhan et al.   APPLIED SURFACE SCIENCE

Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering

(2007) J.M. Hartmann et al.   JOURNAL OF CRYSTAL GROWTH

3D nanowire gate-all-around transistors: Specific integration and electrical features

(2007) C. Dupré et al.   SOLID-STATE ELECTRONICS