Measurement of an Exciton Rabi Rotation in a SingleGaN/AlxGa1−xNNanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control

Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots

(2013) Paweł Podemski et al.   Applied Physics Express

Selective-area growth of thin GaN nanowires by MOCVD

(2012) Kihyun Choi et al.   JOURNAL OF CRYSTAL GROWTH

Site-controlled growth of single GaN quantum dots in nanowires by MOCVD

(2012) Kihyun Choi et al.   JOURNAL OF CRYSTAL GROWTH

Exciton acoustic-phonon coupling in single GaN/AlN quantum dots

(2012) Irina A. Ostapenko et al.   PHYSICAL REVIEW B

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

(2011) Ž. Gačević et al.   JOURNAL OF APPLIED PHYSICS

Exciton fine-structure splitting in GaN/AlN quantum dots

(2010) C. Kindel et al.   PHYSICAL REVIEW B

Phonon-Induced Rabi-Frequency Renormalization of Optically Driven SingleInGaAs/GaAsQuantum Dots

(2010) A. J. Ramsay et al.   PHYSICAL REVIEW LETTERS

Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically ExcitedInGaAs/GaAsQuantum Dots

(2010) A. J. Ramsay et al.   PHYSICAL REVIEW LETTERS

A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots

(2010) A J Ramsay   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-bandk⋅ptheory and configuration-interaction method

(2009) Stanko Tomić et al.   PHYSICAL REVIEW B

GaN/AlN quantum dots for single qubit emitters

(2008) M Winkelnkemper et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires

(2008) Julien Renard et al.   NANO LETTERS