Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-bandk⋅ptheory and configuration-interaction method

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

(2008) L. Nevou et al.   APPLIED PHYSICS LETTERS

Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure

(2008) S. Schulz et al.   EUROPEAN PHYSICAL JOURNAL B

Plane wave methodology for single quantum dot electronic structure calculations

(2008) Nenad Vukmirovć et al.   JOURNAL OF APPLIED PHYSICS

GaN/AlN quantum dots for single qubit emitters

(2008) M Winkelnkemper et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Exciton and Biexciton Luminescence from Single GaN/AlN Quantum Dots in Nanowires

(2008) Julien Renard et al.   NANO LETTERS

Optical properties of photodetectors based on wurtzite quantum dot arrays

(2008) P. Tronc et al.   PHYSICAL REVIEW B

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

(2008) D. Simeonov et al.   PHYSICAL REVIEW B

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

(2008) R. Bardoux et al.   PHYSICAL REVIEW B

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B

The group III–V's semiconductor energy gaps predicted using the B3LYP hybrid functional

(2007) S. Tomić et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES