- Home
- Publications
- Publication Search
- Publication Details
Title
Anisotropy-Driven Spin Relaxation in Germanium
Authors
Keywords
-
Journal
PHYSICAL REVIEW LETTERS
Volume 111, Issue 25, Pages -
Publisher
American Physical Society (APS)
Online
2014-01-09
DOI
10.1103/physrevlett.111.257204
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Temperature dependence of spin lifetime of conduction electrons in bulk germanium
- (2012) Chinkhanlun Guite et al. APPLIED PHYSICS LETTERS
- Magneto-optical analysis of the effectivegtensor and electron spin decoherence in the multivalley conduction band of bulk germanium
- (2012) C. Hautmann et al. PHYSICAL REVIEW B
- Analysis of phonon-induced spin relaxation processes in silicon
- (2012) Yang Song et al. PHYSICAL REVIEW B
- Intrinsic spin lifetime of conduction electrons in germanium
- (2012) Pengke Li et al. PHYSICAL REVIEW B
- Field-Induced Negative Differential Spin Lifetime in Silicon
- (2012) Jing Li et al. PHYSICAL REVIEW LETTERS
- Optical Spin Injection and Spin Lifetime in Ge Heterostructures
- (2012) F. Pezzoli et al. PHYSICAL REVIEW LETTERS
- Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
- (2011) Yasuhiro Fukuma et al. NATURE MATERIALS
- Ultrafast optical orientation and coherent Larmor precession of electron and hole spins in bulk germanium
- (2011) C. Hautmann et al. PHYSICAL REVIEW B
- Electrical spin injection and transport in germanium
- (2011) Yi Zhou et al. PHYSICAL REVIEW B
- Measurement of Electron Spin Lifetime and Optical Orientation Efficiency in Germanium Using Electrical Detection of Radio Frequency Modulated Spin Polarization
- (2011) Chinkhanlun Guite et al. PHYSICAL REVIEW LETTERS
- Lateral Spin Injection in Germanium Nanowires
- (2010) En-Shao Liu et al. NANO LETTERS
- Time-of-flight spectroscopy via spin precession: The Larmor clock and anomalous spin dephasing in silicon
- (2010) Biqin Huang et al. PHYSICAL REVIEW B
- Spin Polarized Electron Transport near theSi/SiO2Interface
- (2009) Hyuk-Jae Jang et al. PHYSICAL REVIEW LETTERS
- Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices
- (2008) Biqin Huang et al. APPLIED PHYSICS LETTERS
- Spin dephasing in drift-dominated semiconductor spintronics devices
- (2008) Biqin Huang et al. PHYSICAL REVIEW B
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started