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Title
Intrinsic spin lifetime of conduction electrons in germanium
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 86, Issue 8, Pages -
Publisher
American Physical Society (APS)
Online
2012-08-06
DOI
10.1103/physrevb.86.085202
References
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Related references
Note: Only part of the references are listed.- Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
- (2012) Satoshi Iba et al. Applied Physics Express
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- Field-Induced Negative Differential Spin Lifetime in Silicon
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- Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
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- Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge
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- Spin polarized photoemission from strained Ge epilayers
- (2011) Federico Bottegoni et al. APPLIED PHYSICS LETTERS
- Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry
- (2011) A. Jain et al. APPLIED PHYSICS LETTERS
- Electric-field control of spin accumulation signals in silicon at room temperature
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- Silicon spin communication
- (2011) Hanan Dery et al. APPLIED PHYSICS LETTERS
- Electron spin coherence exceeding seconds in high-purity silicon
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- Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
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- Ultrafast optical orientation and coherent Larmor precession of electron and hole spins in bulk germanium
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- (2011) Eric J. Loren et al. PHYSICAL REVIEW B
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- (2011) Yi Zhou et al. PHYSICAL REVIEW B
- Measurement of Electron Spin Lifetime and Optical Orientation Efficiency in Germanium Using Electrical Detection of Radio Frequency Modulated Spin Polarization
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- Spin-Orbit Symmetries of Conduction Electrons in Silicon
- (2011) Pengke Li et al. PHYSICAL REVIEW LETTERS
- Electrical creation of spin accumulation in -type germanium
- (2011) H. Saito et al. SOLID STATE COMMUNICATIONS
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- (2011) A.T. Hanbicki et al. SOLID STATE COMMUNICATIONS
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- (2010) C. Shen et al. APPLIED PHYSICS LETTERS
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- Theory of the Spin Relaxation of Conduction Electrons in Silicon
- (2010) J. L. Cheng et al. PHYSICAL REVIEW LETTERS
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- (2009) Eric J. Loren et al. APPLIED PHYSICS LETTERS
- Electrical creation of spin polarization in silicon at room temperature
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- Spin-dependent scattering in a silicon transistor
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