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Title
Gate-Controlled Spin Injection atLaAlO3/SrTiO3Interfaces
Authors
Keywords
-
Journal
PHYSICAL REVIEW LETTERS
Volume 108, Issue 18, Pages -
Publisher
American Physical Society (APS)
Online
2012-05-01
DOI
10.1103/physrevlett.108.186802
References
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- (2011) Manuel Bibes et al. ADVANCES IN PHYSICS
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- Interface Physics in Complex Oxide Heterostructures
- (2011) Pavlo Zubko et al. Annual Review of Condensed Matter Physics
- Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts
- (2011) C.H. Li et al. Nature Communications
- Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces
- (2010) R. Jany et al. APPLIED PHYSICS LETTERS
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- (2010) T. Sasaki et al. APPLIED PHYSICS LETTERS
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- (2010) Guneeta Singh-Bhalla et al. Nature Physics
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- (2008) A. D. Caviglia et al. NATURE
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