Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
Published 2014 View Full Article
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Title
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 90, Issue 4, Pages -
Publisher
American Physical Society (APS)
Online
2014-07-25
DOI
10.1103/physrevb.90.045422
References
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Related references
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- Reply to 'Measurement of mobility in dual-gated MoS2 transistors'
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- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
- (2009) Paolo Giannozzi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
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