Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3
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Title
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 90, Issue 7, Pages -
Publisher
American Physical Society (APS)
Online
2014-08-19
DOI
10.1103/physrevb.90.075203
References
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