Role of MgO barriers for spin and charge transport in Co/MgO/graphene nonlocal spin-valve devices
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Role of MgO barriers for spin and charge transport in Co/MgO/graphene nonlocal spin-valve devices
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 88, Issue 16, Pages -
Publisher
American Physical Society (APS)
Online
2013-10-21
DOI
10.1103/physrevb.88.161405
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
- (2013) Bastian Birkner et al. PHYSICAL REVIEW B
- Effect ofin situdeposition of Mg adatoms on spin relaxation in graphene
- (2013) Adrian G. Swartz et al. PHYSICAL REVIEW B
- Enhancement of spin relaxation time in hydrogenated graphene spin-valve devices
- (2013) M. Wojtaszek et al. PHYSICAL REVIEW B
- Field effect doping of graphene in metal|dielectric|graphene heterostructures: A model based upon first-principles calculations
- (2013) Menno Bokdam et al. PHYSICAL REVIEW B
- Spin Dynamics and Relaxation in Graphene Nanoribbons: Electron Spin Resonance Probing
- (2012) Singamaneni S. Rao et al. ACS Nano
- ESR study of spin relaxation in graphene
- (2012) Maria A. Augustyniak-Jabłokow et al. CHEMICAL PHYSICS LETTERS
- Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
- (2012) Thomas Maassen et al. NANO LETTERS
- Spin Transport in High-Quality Suspended Graphene Devices
- (2012) Marcos H. D. Guimarães et al. NANO LETTERS
- Spin Relaxation in Single-Layer Graphene with Tunable Mobility
- (2012) Wei Han et al. NANO LETTERS
- Nonlinear detection of spin currents in graphene with non-magnetic electrodes
- (2012) Ivan J. Vera-Marun et al. Nature Physics
- Highly efficient spin transport in epitaxial graphene on SiC
- (2012) Bruno Dlubak et al. Nature Physics
- Electron spin relaxation in graphene with random Rashba field: comparison of the D'yakonov–Perel' and Elliott–Yafet-like mechanisms
- (2012) P Zhang et al. NEW JOURNAL OF PHYSICS
- Contact-induced spin relaxation in Hanle spin precession measurements
- (2012) T. Maassen et al. PHYSICAL REVIEW B
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- (2012) Kathleen M. McCreary et al. PHYSICAL REVIEW LETTERS
- Electrical Detection of Spin Precession in Freely Suspended Graphene Spin Valves on Cross-Linked Poly(methyl methacrylate)
- (2012) Ingmar Neumann et al. Small
- Intact Dirac Cones at Broken Sublattice Symmetry: Photoemission Study of Graphene on Ni and Co
- (2012) A. Varykhalov et al. Physical Review X
- Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors
- (2011) David Jimenez IEEE TRANSACTIONS ON ELECTRON DEVICES
- Empirical Modeling of Metal-Contact Effects on Graphene Field-Effect Transistors
- (2011) Ryo Nouchi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices
- (2011) Ahmet Avsar et al. NANO LETTERS
- Spin relaxation properties in graphene due to its linear dispersion
- (2011) Sanghyun Jo et al. PHYSICAL REVIEW B
- Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
- (2011) S. P. Dash et al. PHYSICAL REVIEW B
- Spin Relaxation in Single-Layer and Bilayer Graphene
- (2011) Wei Han et al. PHYSICAL REVIEW LETTERS
- Theory of 2D Transport in Graphene for Correlated Disorder
- (2011) Qiuzi Li et al. PHYSICAL REVIEW LETTERS
- Observation of Long Spin-Relaxation Times in Bilayer Graphene at Room Temperature
- (2011) T.- Y. Yang et al. PHYSICAL REVIEW LETTERS
- Hysteresis of Electronic Transport in Graphene Transistors
- (2010) Haomin Wang et al. ACS Nano
- Contact resistivity and current flow path at metal/graphene contact
- (2010) K. Nagashio et al. APPLIED PHYSICS LETTERS
- Charge-density depinning at metal contacts of graphene field-effect transistors
- (2010) Ryo Nouchi et al. APPLIED PHYSICS LETTERS
- Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
- (2010) S. A. Thiele et al. JOURNAL OF APPLIED PHYSICS
- Electronic spin transport in graphene field-effect transistors
- (2010) M. Popinciuc et al. PHYSICAL REVIEW B
- Tight-binding theory of the spin-orbit coupling in graphene
- (2010) Sergej Konschuh et al. PHYSICAL REVIEW B
- Tunneling Spin Injection into Single Layer Graphene
- (2010) Wei Han et al. PHYSICAL REVIEW LETTERS
- Manipulation of Spin Transport in Graphene by Surface Chemical Doping
- (2010) K. Pi et al. PHYSICAL REVIEW LETTERS
- Electron spin relaxation in graphene: The role of the substrate
- (2009) Christian Ertler et al. PHYSICAL REVIEW B
- Graphene grown on Co(0001) films and islands: Electronic structure and its precise magnetization dependence
- (2009) A. Varykhalov et al. PHYSICAL REVIEW B
- Band-structure topologies of graphene: Spin-orbit coupling effects from first principles
- (2009) M. Gmitra et al. PHYSICAL REVIEW B
- Role of contacts in graphene transistors: A scanning photocurrent study
- (2009) T. Mueller et al. PHYSICAL REVIEW B
- Spin-Orbit-Mediated Spin Relaxation in Graphene
- (2009) D. Huertas-Hernando et al. PHYSICAL REVIEW LETTERS
- Impurity-Induced Spin-Orbit Coupling in Graphene
- (2009) A. H. Castro Neto et al. PHYSICAL REVIEW LETTERS
- Growth of atomically smooth MgO films on graphene by molecular beam epitaxy
- (2008) W. H. Wang et al. APPLIED PHYSICS LETTERS
- Doping Graphene with Metal Contacts
- (2008) G. Giovannetti et al. PHYSICAL REVIEW LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search