Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots

Steering photon statistics in single quantum dots: From one- to two-photon emission

(2013) G. Callsen et al.   PHYSICAL REVIEW B

Erratum: Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-bandk·ptheory and configuration-interaction method [Phys. Rev. B79, 245330 (2009)]

(2012) Stanko Tomić et al.   PHYSICAL REVIEW B

Exciton acoustic-phonon coupling in single GaN/AlN quantum dots

(2012) Irina A. Ostapenko et al.   PHYSICAL REVIEW B

Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots

(2011) S. Schulz et al.   PHYSICAL REVIEW B

Second-order piezoelectricity in wurtzite III-N semiconductors

(2011) Joydeep Pal et al.   PHYSICAL REVIEW B

Large internal dipole moment in InGaN/GaN quantum dots

(2010) Irina A. Ostapenko et al.   APPLIED PHYSICS LETTERS

Subnanosecond spectral diffusion measurement using photon correlation

(2010) G. Sallen et al.   Nature Photonics

Energy renormalization of exciton complexes in GaAs quantum dots

(2010) Marco Abbarchi et al.   PHYSICAL REVIEW B

Exciton fine-structure splitting in GaN/AlN quantum dots

(2010) C. Kindel et al.   PHYSICAL REVIEW B

Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-bandk⋅ptheory and configuration-interaction method

(2009) Stanko Tomić et al.   PHYSICAL REVIEW B

Internal electronic structure and fine structure of multiexcitons in semiconductor quantum dots

(2009) Vladan Mlinar et al.   PHYSICAL REVIEW B

Few-particle energies versus geometry and composition ofInxGa1−xAs/GaAsself-organized quantum dots

(2009) Andrei Schliwa et al.   PHYSICAL REVIEW B

GaN/AlN quantum dots for single qubit emitters

(2008) M Winkelnkemper et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots

(2008) M. Winkelnkemper et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

(2008) D. Simeonov et al.   PHYSICAL REVIEW B

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B

Controlled Phase Shifts with a Single Quantum Dot

(2008) I. Fushman et al.   SCIENCE