Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
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Title
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 88, Issue 15, Pages -
Publisher
American Physical Society (APS)
Online
2013-10-29
DOI
10.1103/physrevb.88.155439
References
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Related references
Note: Only part of the references are listed.- Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation
- (2012) U. Starke et al. MRS BULLETIN
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- (2012) J. Ristein et al. PHYSICAL REVIEW LETTERS
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- (2012) Choongyu Hwang et al. Scientific Reports
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- (2011) C. Coletti et al. APPLIED PHYSICS LETTERS
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- (2011) B. K. Daas et al. JOURNAL OF APPLIED PHYSICS
- Stacking-dependent band gap and quantum transport in trilayer graphene
- (2011) W. Bao et al. Nature Physics
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- (2011) Chun Hung Lui et al. Nature Physics
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- (2011) Amir Yacoby Nature Physics
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- (2010) C Riedl et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
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