Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces
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Title
Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 88, Issue 8, Pages -
Publisher
American Physical Society (APS)
Online
2013-08-09
DOI
10.1103/physrevb.88.085408
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Related references
Note: Only part of the references are listed.- A density functional theory study of epitaxial graphene on the (3×3)-reconstructed C-face of SiC
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- (2011) W. A. de Heer et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
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- (2010) Sergey Kopylov et al. APPLIED PHYSICS LETTERS
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- A grid-based Bader analysis algorithm without lattice bias
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- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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- Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
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- Graphene-substrate interaction on6H-SiC(0001¯): A scanning tunneling microscopy study
- (2008) F. Hiebel et al. PHYSICAL REVIEW B
- Microscopic thickness determination of thin graphite films formed onSiCfrom quantized oscillation in reflectivity of low-energy electrons
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- (2008) C. Virojanadara et al. PHYSICAL REVIEW B
- Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
- (2008) K. V. Emtsev et al. PHYSICAL REVIEW B
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