Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
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Title
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 85, Issue 4, Pages -
Publisher
American Physical Society (APS)
Online
2012-01-30
DOI
10.1103/physrevb.85.045323
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Related references
Note: Only part of the references are listed.- Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy
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- Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure
- (2010) B. V. Novikov et al. Physica Status Solidi-Rapid Research Letters
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- (2010) S. Breuer et al. PHYSICAL REVIEW B
- Predicted band structures of III-V semiconductors in the wurtzite phase
- (2010) A. De et al. PHYSICAL REVIEW B
- Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy
- (2010) Soo-Ghang Ihn et al. SOLID STATE COMMUNICATIONS
- Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires
- (2009) Thang B. Hoang et al. APPLIED PHYSICS LETTERS
- Atomically sharp catalyst-free wurtzite GaAs∕AlGaAs nanoneedles grown on silicon
- (2008) Michael Moewe et al. APPLIED PHYSICS LETTERS
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