Article
Multidisciplinary Sciences
M. Jansson, V. V. Nosenko, G. Yu Rudko, F. Ishikawa, W. M. Chen, I. A. Buyanova
Summary: In this study, the effects of Bi incorporation on lattice dynamics and carrier recombination processes in GaAs/GaAsBi core/shell nanowires were investigated. It was found that increasing the Bi-beam equivalent pressure did not necessarily result in a higher alloy composition but significantly affected the carrier localization in GaAsBi. The bandgap of the Bi-containing shell remained practically independent of the Bi BEP, while the emission spectra of the nanowires experienced a significant red shift under increased Bi supply as a result of the localization effect.
SCIENTIFIC REPORTS
(2023)
Article
Multidisciplinary Sciences
Yi Liu, Johan Knutsson, Nathaniel Wilson, Elliot Young, Sebastian Lehmann, Kimberly A. Dick, Chris J. Palmstrom, Anders Mikkelsen, Rainer Timm
Summary: This research demonstrates the self-selective growth of ordered few atoms structures using larger III-V semiconductor nanowires as templates, showing the potential for designing structures with predicted novel topological nature.
NATURE COMMUNICATIONS
(2021)
Article
Chemistry, Physical
Chih-Feng Wang, Patrick Z. El-Khoury
Summary: The study reveals that nonlinear optical processes can be enhanced at plasmonic tip-sample nanojunctions, allowing for high-spatial-resolution chemical analysis through enhanced spectroscopies.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Syed Mansoor Ali, Abdullah Almohammedi, M. S. AlGarawi, S. S. AlGhamdi, H. Kassim, Fahad N. Almutairi, Asif Mahmood, Khalid Saeed
Summary: The effects of Sn doping on the characteristics of p-type CuI thin films were investigated. XRD analysis confirmed the formation of gamma-phase cubic structure with a preferred orientation along (111) XRD plane. FESEM observations showed that surface morphology and grain size varied with doping concentration. The estimated energy bandgap increased from 2.42 to 2.65 eV with Sn doping. The PL results indicated a reduction in peak intensity with increasing doping level. Hall analysis revealed an improvement in electrical conductivity and carrier concentration with Sn doping. These findings suggest that Sn-doped CuI thin films are suitable as hole transport layers in perovskite solar cells.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Alina Valimukhametova, Conor Ryan, Thomas Paz, Fabian Grote, Anton Naumov
Summary: Graphene oxide (GO) is a promising nanomaterial for optoelectronic applications due to its fluorescence and beneficial physical properties. While other graphene derivatives are possible, GO remains the most heavily used. This study explores different graphene derivatives and their optical properties, proposing a unified model for optical emission. The research suggests that graphene derivatives have minimal dependence on functional groups for their optical properties, indicating potential for use in research and industry.
Article
Chemistry, Physical
Pawan Kumar, Devender Singh, Isha Gupta
Summary: Combustion derived Gd1-xSr2AlO5:x mol% Eu3+ (x = 1-5 mol%) nanophosphors with tetragonal structure and space-symmetry of I4/mcm (space group no. 140) were successfully synthesized and characterized. The doping of Eu3+ ions resulted in expanded lattice constants/volume and shifted diffraction peaks, as confirmed by X-ray diffraction and Rietveld refinement. The nanophosphors exhibited excellent morphology with almost spherical particles in nanoscale, as observed by SEM and TEM. The optimized doping concentration of Eu3+ ions was determined to be 3 mol%, showing good optical properties and thermal stability.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Tarek Hidouri, Faouzi Saidi, Radhia Hamila, Badria M. Al-Shahri
Summary: High-resolution X-ray diffraction and atomic force microscopy were used to investigate the structural, morphological, and optical properties of quaternary BInGaAs single quantum wells grown at different temperatures. The study revealed that lower growth temperatures can improve the structure, and abnormal temperature dependence of photoluminescence peak position and intensity are major causes. Using the localized-state ensemble model, it was quantitatively proven that variations in growth temperature impact the structure's optical response.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Hao Xu, Wei Zhu, Mingliang Tang, Xiangyuan Wang, Yin Zhang
Summary: This study investigated a multi-component oxide glass consisting of 50B(2)O(3)-(25-x)Al2O3-10Na(2)O-xBi(2)O(3)-15CaF(2)-0.5Dy-0.5Eu (x = 0 , 5 , 10 , 15 , 20 , 25 mol%). The fluoroborate glass exhibited non-crystallinity, as confirmed by X-Ray diffraction. FTIR spectra revealed the structural properties of the glass, characterized by the stretching and vibrating groups of various boric groups. The optical band gap measurements confirmed the presence of unbridged oxygen (NBOs) in the glass samples. The refractive index of the fluoroborate glass increased with the Bi2O3 content, and the glass exhibited strong emission in the blue, yellow, and red range. The emission spectra were analyzed to calculate chromaticity coordinates, color temperature, color rendering index, and color purity. By adjusting the Bi2O3 content and excitation wavelength, the glass was able to emit white light, making it suitable for white light-emitting diodes (WLEDs).
MATERIALS TODAY CHEMISTRY
(2022)
Article
Materials Science, Multidisciplinary
Premshila Kumari, Avritti Srivastava, Anjali Saini, Deepak Sharma, Jai S. Tawale, Sanjay K. Srivastava
Summary: In this study, a facile method for the bulk synthesis of high quality wurtzite structured zinc oxide nanoparticles was reported. The effects of air annealing on the structure, morphology, composition, optical and photoluminescence properties of the nanoparticles were investigated. The results showed that annealing treatment led to changes in the morphology, structure, and optical properties of the nanoparticles. The study also revealed the influence of annealing temperature on the defects and composition of the nanoparticles.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Premshila Kumari, Avritti Srivastava, Ruchi K. Sharma, Anjali Saini, Deepak Sharma, Jai S. Tawale, Sanjay K. Srivastava
Summary: This study reports the bulk synthesis of high quality ZnO nanoparticles using a facile wet chemical colloidal method, and investigates the effect of air annealing on their properties. New findings and explanations were presented regarding the structural, morphological, compositional, and optical aspects of the ZnO nanoparticles.
MATERIALS TODAY COMMUNICATIONS
(2022)
Article
Engineering, Electrical & Electronic
Naoomi Yamada, Mari Mizutani, Kenta Matsuura, Masataka Imura, Hidenobu Murata, Junjun Jia, Fumio Kawamura
Summary: Wurtzite-type MgxZn1-xSnN2 alloys are proposed as promising earth-abundant and tunable band gap semiconductors with the potential to be grown on GaN substrates. These alloys show green-light emissions and can be tuned from 1.5 to 2.3 eV by increasing the composition parameter x. Direct-gap semiconductors with band gaps in the range of 1.8 to 2.5 eV are highly anticipated for the development of green LEDs and high-efficiency tandem solar cells.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Ceramics
Yu Yang, Changzhao Chen, Xin Wang
Summary: This research aims to study the influence of Ce-doped SnO2 nanocrystals on oxygen vacancy defects. The results show that the Ce doping concentration affects the distribution of Ce3+/Ce4+ ions and the occurrence of CeO2 impurity phase. The optimum doping concentration is 6 at.%, which corresponds to the maximum oxygen vacancy concentration. Furthermore, the band gap narrowing effect and enhanced emission indicate the potential of Ce-doped SnO2 in designing visible light responsive SnO2 based optoelectronic materials.
CERAMICS INTERNATIONAL
(2023)
Article
Chemistry, Multidisciplinary
Amita Ummadisingu, Simone Meloni, Alessandro Mattoni, Wolfgang Tress, Michael Graetzel
Summary: The crystal size in metal halide perovskite films has a significant impact on their opto-electronic characteristics, particularly due to the concurrent effects of quantum confinement and size-dependent structural effects resulting in a wider band gap. This phenomenon assists in photo-induced charge separation and is widely applicable in different compositions and deposition methods.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2021)
Article
Materials Science, Multidisciplinary
Ummer Altaf, Mohd Zubair Ansari, Seemin Rubab
Summary: The synthesis of Sn1-xAlxO2 (x = 0.0, 0.01, 0.02, 0.03, 0.04) nanoparticles by the sol-gel method and their characterization using various techniques revealed that increasing the aluminium content led to a decrease in the crystallite size and optical band gap. Photoluminance measurements showed violet emissions for all samples, with the 3% doped sample exhibiting the lowest intensity, indicating its potential for applications in photocatalysis and lithium-ion batteries. Additionally, 3% aluminium doping was found to be the optimum concentration for tin oxide samples in photocatalytic applications.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Sumara Khursheed, Vinay Kumar, Vivek K. Singh, H. C. Swart, Jitendra Sharma
Summary: In this study, Sr3B2O6:Tb3+/PMMA luminescent polymer nanocomposite films were synthesized by combustion synthesis of Sr3B2O6:Tb3+ nanophosphors and dispersion in a PMMA matrix. Experimental investigations confirmed the viability of these LPNC films for solid state lighting applications, showing unique photoluminescence properties and thermal performance.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Chemistry, Multidisciplinary
M. Negri, L. Francaviglia, D. Kaplan, V Swaminathan, G. Salviati, A. Fontcuberta i Morral, F. Fabbri
Summary: This study demonstrates the excitonic absorption and cathodoluminescence emission of MoS2 micro-pyramids grown on SiO2 substrates by CVD. By utilizing CL emission, defect intra-gap states related to the pyramid edges were detected, with enhanced intensity observed at the pyramid basal vertices. Analysis of photoluminescence and absorption provided insights into the optical functionality of MoS2 pyramids, suggesting potential applications for other 3D structures within the 2D materials family.
Article
Materials Science, Multidisciplinary
Heera Menon, Nicholas Paul Morgan, Crispin Hetherington, Robin Athle, Matthew Steer, Iain Thayne, Anna Fontcuberta Morral, Mattias Borg
Summary: This study reports the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) and provides detailed information on the fabrication process. It emphasizes the importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt during annealing. Additionally, it demonstrates for the first time the significance of ensuring a pristine Si seed area to achieve single-crystalline InSb.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Physical
Lucas Gueniat, Lea Ghisalberti, Li Wang, Christian Dais, Nicholas Morgan, Didem Dede, Wonjong Kim, Akshay Balgarkashi, Jean-Baptiste Leran, Renato Minamisawa, Harun Solak, Craig Carter, Anna Fontcuberta Morral
Summary: This study presents a different approach for manufacturing nanowire arrays by using Si nanopillar arrays instead of traditional nano-scale holes. The results show that nanopillars provide better control over growth mechanisms and scalability, and adjusting the contact angle is crucial for optimizing yield. Large-scale arrays produced using lithography methods show high yield, and further optimization of processing steps could lead to deterministic nanowire phase engineering at the wafer-scale.
NANOSCALE HORIZONS
(2022)
Article
Chemistry, Multidisciplinary
Jann Harberts, Malte Siegmund, Carina Hedrich, Wonjong Kim, Anna Fontcuberta Morral, Robert Zierold, Robert H. Blick
Summary: This study demonstrates the generation of human induced pluripotent stem cell (iPSCs)-derived neurons on various types of nanowire (NW) arrays, which could have significant implications for stem cell research and regenerative medicine.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Jakub Jasinski, Akshay Balgarkashi, Valerio Piazza, Didem Dede, Alessandro Surrente, Michal Baranowski, Duncan K. Maude, Mitali Banerjee, Riccardo Frisenda, Andres Castellanos-Gomez, Anna Fontcuberta i Morral, Paulina Plochocka
Summary: Strain is a commonly used tool to tune optoelectronic properties, especially for TMDs. This paper presents a novel approach to induce strain in MoS2 monolayers using homoepitaxially grown GaAs nanomembranes, which allows for the integration of TMDs with III-V semiconductor nanostructures. The strain lifts the degeneracy of exciton states, resulting in linearly polarized emission with the polarization axis determined by the orientation of the nanomembranes.
Article
Physics, Applied
Begona Abad, Kirstin Alberi, Katherine E. Ayers, Sushmee Badhulika, Chunmei Ban, Helene Bea, Fanny Beron, Julie Cairney, Jane P. Chang, Christine Charles, Mariadriana Creatore, Hui Dong, Jia Du, Renate Egan, Karin Everschor-Sitte, Cathy Foley, Anna Fontcuberta i Morral, Myung-Hwa Jung, Hyunjung Kim, Sarah Kurtz, Jieun Lee, Diana C. Leitao, Kristina Lemmer, Amy C. Marschilok, Bogdana Mitu, Bonna K. Newman, Roisin Owens, Anna-Maria Pappa, Youngah Park, Michelle Peckham, Liane M. Rossi, Sang-Hee Shim, Saima Afroz Siddiqui, Ji-Won Son, Sabina Spiga, Sedina Tsikata, Elisa Vianello, Karen Wilson, Hiromi Yuasa, Ilaria Zardo, Iryna Zenyuk, Yanfeng Zhang, Yudi Zhao
Summary: Women have made significant contributions to applied physics research and their involvement is crucial for ongoing progress. The Roadmap on Women in Applied Physics, written by female scientists and engineers, aims to celebrate their achievements, showcase established and early career researchers expanding boundaries in their fields, and increase visibility of women's impact on applied physics research. The topics covered include plasma materials processing and propulsion, super-resolution microscopy, bioelectronics, spintronics, superconducting quantum interference device technology, quantum materials, 2D materials, catalysis and surface science, fuel cells, batteries, photovoltaics, neuromorphic computing and devices, nanophotonics and nanophononics, and nanomagnetism. The intention is to inspire more women to enter these fields and foster inclusivity within the scientific community.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Heera Menon, Hossein Jeddi, Nicholas Paul Morgan, Anna Fontcuberta i Morral, Hakan Pettersson, Mattias Borg
Summary: Monolithic integration of InSb on Si was achieved by fabricating InSb metal-semiconductor-metal photodetectors directly on Si using a rapid melt growth process. The photodetectors exhibited a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm x 1.1 μm x 120 nm. Optical characterization revealed stable photoresponse under 1550 nm illumination, with a responsivity of 0.50 A W-1 at 16 nW illumination and a millisecond time constant. Electron backscatter diffraction spectroscopy showed occasional twin defects and crystal lattice twist in the single crystalline InSb nanostructures, causing a low-energy tail in the detector response, extending the photosensitivity to 10 μm wavelengths (0.12 eV) at 77 K.
NANOSCALE ADVANCES
(2023)
Article
Energy & Fuels
Santhanu Panikar Ramanandan, Andrea Giunto, Elias Z. Stutz, Benoit Reynier, Ileane Tiphaine Francoise Marie Lefevre, Marin Rusu, Susan Schorr, Thomas Unold, Anna Morral, Jose A. Marquez, Mirjana Dimitrievska
Summary: This work explores the synthesis of BaZrS3 from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 degrees C to 1000 degrees C. The diffusion of sulfur species in the film is identified as the rate-limiting step of this reaction. The processing temperature plays a significant role in determining the conversion from oxide to sulfide phase. BaZrS3 demonstrates a unique ability to accommodate non-stoichiometric compositions, unlike other chalcogenides.
JOURNAL OF PHYSICS-ENERGY
(2023)
Article
Chemistry, Multidisciplinary
Nicholas Morgan, Vladimir G. Dubrovskii, Ann-Kristin Stief, Didem Dede, Marie Sangle-Ferriere, Alok Rudra, Valerio Piazza, Anna Fontcuberta i Morral
Summary: This paper investigates the growth mechanisms and shape evolution of GaAs nanoridges on GaAs(100) substrates using selective area MOVPE. The growth process consists of three distinct stages, with the first stage showing step-flow growth behavior, the second stage forming {101} side facets while the (100) flat top facet shrinks, and the third stage involving overgrowth onto the mask with a reduced growth rate. A kinetic model is developed to accurately describe the width-dependent evolution of the nanoridge morphology in all three stages.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Energy & Fuels
Rajrupa Paul, Vanessa Conti, Mahdi Zamani, Simon Escobar-Steinvall, Hector Sanchez-Martin, Carlotta Gastaldi, Mihai Adrian Ionescu, Ignacio Iniquez-de-la-Torre, Mirjana Dimitrievska, Anna Fontcuberta i Morral, Valerio Piazza
Summary: This study reports the electrical properties of Zn3P2 thin films with different crystallinity grown on InP substrates, and correlates the crystalline quality and composition to the electrical properties. Capacitance-voltage measurements and secondary ion mass spectroscopy demonstrate the direct correlation between the carrier concentration and the Zn/P ratio. The highest hole mobility value (125 cm2/Vs) was obtained from high-quality single crystalline Zn3P2 thin films. Additionally, the electrical characteristics of the heterojunction between the thin film and the substrate were illustrated. This work sheds light on the electrical properties and conduction mechanism, thus providing a better understanding of the limitations and potentials of the electrical devices related to the material.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Chemistry, Multidisciplinary
Chunyi Huang, Didem Dede, Nicholas Morgan, Valerio Piazza, Xiaobing Hu, Anna Morral, Lincoln J. Lauhon
Summary: Selective area epitaxy is a promising method for defining nanowire networks in topological quantum computing. A strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks is reported. The growth of a dilute AlGaAs layer after doping the GaAs nanomembrane leads to the incorporation of Si, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms the presence of high electron density in the channel.
Article
Nanoscience & Nanotechnology
Antonia Hager, Lucas Gueniat, Nicholas Morgan, Santhanu Panikar Ramanandan, Alok Rudra, Valerio Piazza, Anna Fontcuberta i Morral, Didem Dede
Summary: Semiconductor nanowires (NWs) in horizontal configuration can be used for scalable NW-based devices. Selective area epitaxy (SAE) through precise nanopatterning on growth masks enables bottom-up large-scale manufacturing of these nanostructures. Electron beam lithography offers high accuracy but is economically impractical for large-scale production. Nanoimprint lithography (NIL), on the other hand, is a more cost-effective alternative with the potential to significantly reduce fabrication time. In this study, we compare thermal and UV NIL for patterning substrates for SAE and find that UV NIL is superior in patterning sub-100 nm mask features at the wafer scale.
Article
Materials Science, Multidisciplinary
Andrea Giunto, Louise E. Webb, Thomas Hagger, Anna Fontcuberta i Morral
Summary: GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. In this work, the potential utilization of indium (In) as a p-type dopant in GeSn is explored. The study reveals that In acts as a surfactant during the epitaxial growth of GeSn, leading to Sn segregation and affecting the material's local composition. The work provides insights on the limitations and discourages the use of in situ In doping of GeSn in optoelectronic devices.
PHYSICAL REVIEW MATERIALS
(2023)
Article
Chemistry, Physical
Elias Z. Stutz, Santhanu P. Ramanandan, Mischa Flor, Rajrupa Paul, Mahdi Zamani, Simon Escobar Steinvall, Diego Armando Sandoval Salaiza, Claudia Xifra Montesinos, Maria Chiara Spadaro, Jean-Baptiste Leran, Alexander P. Litvinchuk, Jordi Arbiol, Anna Fontcuberta Morral, Mirjana Dimitrievska
Summary: This study investigates the impact of stoichiometry variations and defects on the structural and optoelectronic properties of monocrystalline zinc phosphide (Zn3P2) using experimental methods and density functional theory calculations. The results show that P interstitial defects are more favorable than Zn vacancies in P-rich and Zn-poor regions, and these defects affect the band structure and optical properties, allowing for tunable functionality in zinc phosphide.
FARADAY DISCUSSIONS
(2022)
Article
Materials Science, Multidisciplinary
Elias Z. Stutz, Mahdi Zamani, Djamshid A. Damry, Lea Buswell, Rajrupa Paul, Simon Escobar Steinvall, Jean-Baptiste Leran, Jessica L. Boland, Mirjana Dimitrievska, Anna Fontcuberta Morral
Summary: Zinc phosphide, a semiconductor material, has high absorption coefficient in the spectral range for single junction photovoltaic applications. The optical properties of single crystalline Zn3P2 thin films grown on (100) InP were thoroughly studied, revealing two main radiative recombination pathways: band-to-band electronic transitions and defect band or band tail related recombination mechanisms. The origin of the lower-energy transition is believed to be phosphorus interstitials.
MATERIALS ADVANCES
(2022)
