Integration of High-$\kappa$ Dielectrics and Metal Gate on Gate-All-Around Si-Nanowire-Based Architecture for High-Speed Nonvolatile Charge-Trapping Memory

Title
Integration of High-$\kappa$ Dielectrics and Metal Gate on Gate-All-Around Si-Nanowire-Based Architecture for High-Speed Nonvolatile Charge-Trapping Memory
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 6, Pages 662-664
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-04-29
DOI
10.1109/led.2009.2019254

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