A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer

出版年份 2015 全文链接

标题

作者

关键词

Vertical HEMT, Current blocking layer, Parallel multiple apertures, Vertical leakage, Breakdown voltage, AlGaN/GaN, Silicon oxide, Device simulation

出版物

Volume 118, Issue -, Pages 59-63

出版商

Elsevier BV

发表日期

2014-11-26

DOI

10.1016/j.vacuum.2014.11.022

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