Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions

Title
Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 78, Issue 5, Pages -
Publisher
American Physical Society (APS)
Online
2008-08-16
DOI
10.1103/physrevb.78.054111

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