Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions

标题
Radiation damage formation in InP, InSb, GaAs, GaP, Ge, and Si due to fast ions
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 78, Issue 5, Pages -
出版商
American Physical Society (APS)
发表日期
2008-08-16
DOI
10.1103/physrevb.78.054111

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