4.6 Article

Nanoscale phononic interconnects in THz frequencies

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 16, Issue 42, Pages 23355-23364

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp02328e

Keywords

-

Funding

  1. National Science Foundation (NSF) [1307671]
  2. FAME
  3. MARCO
  4. DARPA
  5. U.S. Dept. of Education GAANN Fellowship
  6. Directorate For Engineering [1307671] Funding Source: National Science Foundation
  7. Div Of Electrical, Commun & Cyber Sys [1307671] Funding Source: National Science Foundation

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Phononic computing is emerging as an alternative computing paradigm to the conventional electronic and optical computing. In this study, we propose and analyze various phononic interconnects, such as nano-scaled phononic resonators, waveguides and switches, on the < 111 > surface of 3C-SiC and 3C-GeSi with substitutional and vacancy defects. This is achieved by simultaneously introducing defects of various types, and by varying their specific locations on the surface. To calculate the intrinsic and the defect-induced vibrational properties, such as the phononic bandgap and the variation in the phonon spectra, the total phonon density of states (TPDOS) and the partial phonon density of states (PPDOS) were calculated using molecular dynamics simulations with semi-empirical potentials. The proposed phononic interconnects, in conjunction with electronic and/or photonic interconnects, can be used in the current and future devices.

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