Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Improved Resistive Switching Properties of Solution-Processed TiOxFilm by Incorporating Atomic Layer Deposited TiO2layer

(2011) Insung Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices

(2010) Xinjun Liu et al.   SOLID STATE COMMUNICATIONS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition

(2009) D. S. Shang et al.   JOURNAL OF APPLIED PHYSICS

Resistance switching behaviors of V-doped La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass

(2009) Ting Zhang et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes

(2009) Song-Lin Li et al.   JOURNAL OF APPLIED PHYSICS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology