Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation
Published 2018 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume -, Issue -, Pages 1800218
Publisher
Wiley
Online
2018-07-26
DOI
10.1002/pssa.201800218
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
- (2018) Poppy Siddiqua et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- On the chemical homogeneity of In x Ga 1−x N alloys – Electron microscopy at the edge of technical limits
- (2017) Petra Specht et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy
- (2017) G. Staszczak et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging
- (2017) C. Coll et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Strain and size combined effects on the GaN band structure: VEELS and DFT study
- (2017) M. Benaissa et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature
- (2017) J. Laifi et al. VACUUM
- Dislocation core structures in (0001) InGaN
- (2016) S. L. Rhode et al. JOURNAL OF APPLIED PHYSICS
- Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity
- (2015) Andrew I. Duff et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Growth of wurtzite and zinc-blende phased GaN on silicon (100) substrate with sputtered AlN buffer layer
- (2013) Wen-Yuan Pang et al. JOURNAL OF CRYSTAL GROWTH
- Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy
- (2012) A. Eljarrat et al. MICROSCOPY AND MICROANALYSIS
- Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
- (2011) Yoshitaka Taniyasu et al. APPLIED PHYSICS LETTERS
- Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
- (2011) G. Jacopin et al. JOURNAL OF APPLIED PHYSICS
- High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
- (2011) C M Wu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
- (2010) Ž. Gačević et al. JOURNAL OF APPLIED PHYSICS
- Band gap engineering of wurtzite and zinc-blende GaN/AlN superlattices from first principles
- (2010) X. Y. Cui et al. JOURNAL OF APPLIED PHYSICS
- Structure and photoluminescence of wurtzite/zinc-blende heterostructure GaN nanorods
- (2009) H. Y. Xu et al. APPLIED PHYSICS LETTERS
- A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
- (2008) S. Fernández-Garrido et al. APPLIED PHYSICS LETTERS
- Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
- (2008) A. Yoshikawa et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires
- (2008) B W Jacobs et al. NANOTECHNOLOGY
- Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells
- (2008) E. Dimakis et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on6H-SiC(0001)
- (2008) Tommy Ive et al. PHYSICAL REVIEW B
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More