Article
Engineering, Electrical & Electronic
Mario Lanza, Gabriel Molas, Ishai Naveh
Summary: While research on resistive switching materials is growing, Intel's recent shutdown of its resistive switching memory manufacturing plant raises questions about the future of nanoelectronic technologies based on resistive switching devices.
NATURE ELECTRONICS
(2023)
Article
Physics, Applied
Shangradhanva E. Vasisth, Juan C. Nino
Summary: The research team successfully fabricated core-shell nanowires using a combination of bottom-up and top-down techniques, and demonstrated both bipolar and complementary resistive switching modes. These results are significant for the use of synaptic elements in neuromorphic network architectures.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Ramesh Y. Adhikari, Nicole E. Harmon, K. Paige Williams
Summary: The study demonstrates resistive switching behavior on unprocessed leaves, showing reliable switching between high and low resistance states with high endurance and potential for memory devices.
APPLIED MATERIALS TODAY
(2021)
Article
Materials Science, Multidisciplinary
B. Sun, S. Ranjan, G. Zhou, T. Guo, Y. Xia, L. Wei, Y. N. Zhou, Y. A. Wu
Summary: Resistive random-access memory provides dual functionalities of data storage and computing at the same position, making it a promising candidate for energy efficient neuromorphic computing. The key points to realize neuromorphic computing include selection of functional materials, design of multistate devices, and complete logic function implementation in-memory computing. A memristor device with stable intermediate multistate resistive switching behaviors has been demonstrated, which enables simulated pixel data storage and 2-bit parallel logic computations for neuromorphic computing.
MATERIALS TODAY ADVANCES
(2021)
Article
Nanoscience & Nanotechnology
Ramesh Gayathri, Varghese Maria Angela, Panneerselvam Devibala, Predhanekar Mohamed Imran, Samuthira Nagarajan
Summary: In order to comprehend the relationship between structure and property as well as the significance of the donor-acceptor system in resistive memory devices, a series of new organic small molecules were designed and synthesized. The devices with A-N-D-N-A structures exhibited write-once-read-many memory behavior, while those based on D-N-D-N-D molecules only showed conductor property. The presence of donor/acceptor substituents significantly influenced the memory-switching behavior, suggesting that a D-A architecture is ideal for resistance switching characteristics in memory devices.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Yu-Ta Chen, Tsung-Hsien Hsu, Cheng-Liang Huang
Summary: The resistive switching characteristics of amorphous Sm2Ti2O7 thin films prepared by RF sputtering and the effect of post-metallization annealing (PMA) were investigated. The results showed that PMA treatment improved the resistive switching properties by forming an AlOx interface layer. The study provides potential applications for non-volatile memory.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Tangyou Sun, Hui Shi, Shuai Gao, Zhiping Zhou, Zhigiang Yu, Wenjing Guo, Haiou Li, Fabi Zhang, Zhimou Xu, Xiaowen Zhang
Summary: In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The optimal ratio of PVA:MoS2 was determined to be 4:1, presenting excellent resistive switching behavior. Additionally, the resistive switching performance was greatly improved by inserting a protective layer of ZnO between the electrode and the composite film. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device shows great potential for nonvolatile multilevel data storage memory.
Article
Polymer Science
Han-Hyeong Choi, Hyun Jin Kim, Jinwoo Oh, Minsung Kim, Youngjin Kim, Jae Young Jho, Keun Hyung Lee, Jeong Gon Son, Jong Hyuk Park
Summary: An effective and simple approach for fabricating complementary resistive switching (CRS) memory devices using self-assembled block copolymer micelles is reported. This approach can reduce sneak currents and achieve position selectivity during resistive switching.
MACROMOLECULAR RAPID COMMUNICATIONS
(2022)
Article
Physics, Applied
Hongrong Hu, Alexander Scholz, Surya Abhishek Singaraju, Yushu Tang, Gabriel Cadilha Marques, Jasmin Aghassi-Hagmann
Summary: This study presents an inkjet-printed resistive switching device based on an Ag/ZnO/Au structure, exhibiting excellent performance and a stable conduction mechanism.
APPLIED PHYSICS LETTERS
(2021)
Review
Chemistry, Multidisciplinary
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos
Summary: RS devices face challenges in variability and reliability issues, and the current method of endurance evaluation shows high inaccuracy and unreliability. A new method proposed in this article aims to provide a more accurate characterization of endurance in RS devices, which could lead to more reliable literature and accelerate their integration in commercial products.
Article
Chemistry, Multidisciplinary
Xiaomin Liu, Shuxia Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jinjin Zhao
Summary: The introduction of CsPbBr3 quantum dots mixed in graphene oxide for flexible transparent RRAM devices shows a high ON/OFF ratio under illumination, with little impact on resistances from bending or load-cycling. This innovative resistive memory technology opens up possibilities for the development of photoelectrical dual-controlled flexible RRAM devices.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Physics, Applied
Qing Cao, Limiao Xiong, Xudong Yuan, Pengcheng Li, Jun Wu, Hailin Bi, Jun Zhang
Summary: Ag/tungsten disulfide (WS2)-polyvinylpyrrolidone (PVP)/Cu memristors based on monolayer WS2 nanosheets and PVP nanocomposites exhibit write-once read-many times (WORM) memory behavior with low operating voltage, high switching ratio, good endurance, and long data retention time.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Ying Lu, Shuang Gao, Fali Li, Youlin Zhou, Zhuolin Xie, Huali Yang, Wuhong Xue, Benlin Hu, Xiaojian Zhu, Jie Shang, Yiwei Liu, Run-Wei Li
Summary: This paper presents an intrinsically stretchable and twistable resistive switching memory with a large memory window and excellent retention, capable of ensuring data integrity during dynamic stretching-release processes. A logic-in-memory computation prototype is successfully implemented using three stretched memory cells.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Chemistry, Multidisciplinary
Subham Paramanik, Amlan J. Pal
Summary: A family of rudorffites based on silver-bismuth-iodide undergoes a transition from positive photoconductivity (PPC) to negative photoconductivity (NPC) with variation in precursor stoichiometry. The NPC is observed in silver-rich rudorffites due to illumination-induced trap-states leading to carrier recombination and decreased conductivity. In addition to photoconductivity, the rudorffite-based devices exhibit resistive switching between high resistive state (HRS) and low resistive state (LRS) under voltage pulses, and the switching process is reversible and associated with a memory phenomenon. The NPC-exhibiting rudorffites also switch to the HRS under illumination, indicating control of resistive state through electrical and optical inputs. These interesting properties are utilized to demonstrate OR logic gate operation and suggest the materials' potential for in-memory logic operations.
Article
Chemistry, Physical
A. S. Farid, N. A. Hegab, E. Abd El-Wahabb
Summary: The DC conductivity and switching phenomenon of Se-36 Sb31Cu33 non-ordered material were studied at various temperatures below the corresponding glass transition temperature T-g. The study found that the conduction activation energy had dual values, the switching phenomenon exhibited memory behavior, and the mean value of the threshold voltage V-th varied with film thickness and temperature. The results were in agreement with the thermal model for the switching process.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
