Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 209, Issue 8, Pages 1588-1591Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201228165
Keywords
depletion width; diffusion profile; microwire solar cells; p-n-junction; recombination
Funding
- ERC grant Upcon
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We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7% under AM 1.5G solar illumination. The results reveal the importance of scaling the microwire diameter with the depletion width resulting from doping concentrations. The doping of the core should be kept low in order to reduce bulk recombination. Furthermore, the thickness of the n-shell should be kept as thin as possible to limit the emitter losses.
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