期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 209, 期 8, 页码 1588-1591出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201228165
关键词
depletion width; diffusion profile; microwire solar cells; p-n-junction; recombination
资金
- ERC grant Upcon
We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7% under AM 1.5G solar illumination. The results reveal the importance of scaling the microwire diameter with the depletion width resulting from doping concentrations. The doping of the core should be kept low in order to reduce bulk recombination. Furthermore, the thickness of the n-shell should be kept as thin as possible to limit the emitter losses.
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