期刊
PHYSICA B-CONDENSED MATTER
卷 410, 期 -, 页码 85-89出版社
ELSEVIER
DOI: 10.1016/j.physb.2012.10.020
关键词
Tungsten nitride; Tantalum oxide (TaOx); Resistive switching; Filamentary conduction; Resistive memory (RRAM); Non-volatile memory
资金
- National High Technology Development Program of China [2008AA031402]
- Foundation Project by the Science and Technology Council of Shanghai [1052NM07200]
The WNx films were successfully prepared on silicon-based substrates as bottom electrodes for the resistive random access memory (RRAM) cells in Pt (top)/TaOx/WNx (bottom) sandwich structure. The reproducible resistive switching (RS) characteristics of these cells were studied systematically for RRAM applications. The advantages of adopting WNx instead of Pt as bottom electrode material were demonstrated, such as the improvement of the low resistive state value, the RS endurance and the unformity of RS parameters. The X-ray photoelectron spectroscopy revealed that both the oxygen vacancies in the TaOx film and the interfacial tungsten oxynitride (WON) layer formed between the dielectric TaOx film and the WNx bottom electrode play key roles in the RS performance improvement. (c) 2012 Elsevier B.V. All rights reserved.
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