Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si
Authors
Keywords
Electron backscattered diffraction, EBSD, Epitaxial SiGe–Si, Strain measurement, Standard
Journal
ULTRAMICROSCOPY
Volume 148, Issue -, Pages 94-104
Publisher
Elsevier BV
Online
2014-10-01
DOI
10.1016/j.ultramic.2014.09.007

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.