Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si

出版年份 2015 全文链接

标题

作者

关键词

Electron backscattered diffraction, EBSD, Epitaxial SiGe–Si, Strain measurement, Standard

出版物

Volume 148, Issue -, Pages 94-104

出版商

Elsevier BV

发表日期

2014-10-01

DOI

10.1016/j.ultramic.2014.09.007

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