Electrodeposition of copper tetracyanoquinodimethane for bipolar resistive switching non-volatile memories

Electrodeposition experiments of the charge-transfer complex copper tetracyanoquinodimethane (CuTCNQ) (where TCNQ denotes 7,7',8,8'-tetracyanoquinodimethane) on noble metal electrodes (M=Pt and Au) were optimized in order to produce suitable layers for bipolar resistive switching cross-bar M/CuTCNQ/Al memory cells. Corresponding memories exhibited up to more than 10 000 consecutive write/erase cycles, with very stable on and off reading currents and an on/off current ratio of 10. CuTCNQ electrodeposition techniques were furthermore optimized for growing the material in 250nm diameter contact holes of complementary metal oxide semiconductor dies with tungsten bottom contacts.