AFM and Raman studies of topological insulator materials subject to argon plasma etching

Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials

(2012) K. M. F. Shahil et al.   JOURNAL OF APPLIED PHYSICS

Fabrication and characterization of topological insulator Bi2Se3 nanocrystals

(2011) S. Y. F. Zhao et al.   APPLIED PHYSICS LETTERS

Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3Nanoplatelets

(2011) Jun Zhang et al.   NANO LETTERS

Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements

(2011) Isaac Childres et al.   NEW JOURNAL OF PHYSICS

Three-Dimensional Topological Insulators

(2011) M. Zahid Hasan et al.   Annual Review of Condensed Matter Physics

Crystal symmetry breaking in few-quintuple Bi2Te3 films: Applications in nanometrology of topological insulators

(2010) K. M. F. Shahil et al.   APPLIED PHYSICS LETTERS

Stability of exfoliatedBi2Sr2DyxCa1−xCu2O8+δstudied by Raman microscopy

(2010) L. J. Sandilands et al.   PHYSICAL REVIEW B

Gate-Voltage Control of Chemical Potential and Weak Antilocalization inBi2Se3

(2010) J. Chen et al.   PHYSICAL REVIEW LETTERS

A tunable topological insulator in the spin helical Dirac transport regime

(2009) D. Hsieh et al.   NATURE

Interference effect on Raman spectrum of graphene onSiO2/Si

(2009) Duhee Yoon et al.   PHYSICAL REVIEW B

Interference enhancement of Raman signal of graphene

(2008) Y. Y. Wang et al.   APPLIED PHYSICS LETTERS

Raman spectroscopy of Bi-Te thin films

(2008) V. Russo et al.   JOURNAL OF RAMAN SPECTROSCOPY