Article
Materials Science, Multidisciplinary
Jiufu Zhu, Bo Yu, Dacheng Bai, Dongye Pan, Jiawei Zou, Xiaoyu Shi, Shuxiang Ding, Bowen Zhang, Donghang Yan, Xiaojuan Hao, Zuosen Shi, Zhanchen Cui
Summary: In this study, a series of aryl group functionalized polymers were prepared via RAFT polymerization for use as insulator materials in pentacene thin-film transistors. The block polymers containing naphthyl side groups induced an ordered morphology of pentacene through pi-pi interactions and increased the dielectric constant, resulting in a lower threshold voltage.
ACS APPLIED POLYMER MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Xiao Wang, Calla M. McCulley, Kelly Liang, Liang Wang, Xin Xu, Ananth Dodabalapur
Summary: Two improved methods are presented in this article for evaluating contact resistance in organic thin-film transistors (TFTs). These methods can be applied to TFTs with any arbitrary geometry and are suitable for retroactive analysis of current-voltage characteristics. The first method is based on the analysis of the differential conductance of TFTs and separates the conductivity contributions from the contacts and the channel. The second method is especially applicable to nanoscale and short channel length TFTs, using the minimum value of differential on-resistance to separate the contributions of the channel and contact resistances.
ORGANIC ELECTRONICS
(2022)
Article
Chemistry, Physical
Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Jin-Hyuk Bae, In-Man Kang, Doohyeok Lim, Kwangeun Kim, Jaewon Jang
Summary: The combination of SnO2 and Y2O3 passivation layers enhances the performance and stability of TFTs, with yttrium diffusion suppressing oxygen vacancies and improving transistor stability. The fabricated SnO2 TFTs exhibit high performance and stability, making them a viable option for next-generation displays.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Guidong Wang, Dong Li, Xinyu Wang, Yu Zhang, Hao Zhang, Jun Wang
Summary: The charge-transport modes of organic heterojunction transistors (OHJTs) have significant importance in their potential applications. In this study, OHJTs with tunable charge-transport modes were demonstrated based on a single vertical heterointerface. The competition between electrons and holes to as the dominant carriers was attributed to the variation in the densities of two charge carriers. Additionally, the function of the heterointerface was further explored through the insertion of a high-kappa organic dielectric layer.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Chemistry, Multidisciplinary
Wangying Xu, Chuyu Xu, Liping Hong, Fang Xu, Chun Zhao, Yu Zhang, Ming Fang, Shun Han, Peijiang Cao, Youming Lu, Wenjun Liu, Deliang Zhu
Summary: In this study, we successfully grew ultra-thin In-Yb-O thin films using a vacuum-free aqueous solution method for the first time, and investigated the influence of Yb addition on the properties of In2O3. The results show that Yb dopant effectively suppresses oxygen vacancy defects, leading to improved electrical performance and stability of the thin-film transistors. The eco-friendly ultra-thin In-Yb-O films present a great opportunity for future electronic applications.
Article
Chemistry, Analytical
Qi Li, Dedong Han, Junchen Dong, Dengqin Xu, Yue Li, Yi Wang, Xing Zhang
Summary: This study compares the effects of different source/drain electrodes on the electrical properties of ITO TFTs, finding that ITO TFTs with an Al electrode demonstrate better device performance and lower contact resistance. All devices with the four electrode materials show excellent stability under negative bias illumination stress.
Article
Chemistry, Multidisciplinary
Soosang Chae, Tae Il Lee, Jin Young Oh
Summary: By blending PαMS binder with TIPS-pentacene, the electrical stability of organic thin film transistors (OTFTs) was improved through the formation of a vertically phase-separated semiconducting film. This modification induced interface changes, resulting in increased charge current density, decreased charge trap density, reduced electrical hysteresis, and increased field-effect mobility.
KOREAN JOURNAL OF CHEMICAL ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
Xinnan Zhang, Lei Xu, Ruyu Liang, Mengzhen Hu, Jiali Ren, Shijun Luo, Zengcai Song, Wenpeng Yang, Zhihua Zhu
Summary: This study achieves enhanced mobility and stability of metal-oxide thin-film transistors by controlling the sputtering power and indium content. Optimizing the ratio of indium doping can improve both mobility and stability by reducing defects and improving interfacial quality.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abet, Shigenori Ueda, Masato Sasase, Junghwan Kim, Hideo Hosono
Summary: This study successfully fabricated ultrastable thin-film transistors with mobilities of 70 cm(2) (V s)(-1) by understanding the origins of instability in high-mobility amorphous oxide transistors. The research identified the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects, and explained the mechanism of how carbon-monoxide-related impurities affect the stability of high-mobility indium tin zinc oxide transistors.
NATURE ELECTRONICS
(2021)
Article
Physics, Applied
Pavel Valencia-Acuna, Tika R. Kafle, Peymon Zereshki, Hartwin Peelaers, Wai-Lun Chan, Hui Zhao
Summary: In the heterostructure of 1T'-ReS2 and F8ZnPc, holes in ReS2 can efficiently transfer to F8ZnPc on a timescale shorter than 0.35 ps with a long lifetime in F8ZnPc. The lack of electron transfer confirms the feasibility of developing 2D/organic heterostructures with anisotropic electronic and optoelectronic properties.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Tianyuan Song, Dongli Zhang, Mingxiang Wang, Huaisheng Wang, Yilin Yang
Summary: The degradation mechanism of a-IGZO thin-film transistors under pulse drain bias stress is investigated, revealing that the shift of the transfer curve is unexpectedly larger than that under dc drain bias. The mechanism is proposed to involve tunneling and trapping of electrons in different layers during different times under the drain electrode region, with a solution for enhancing stability suggested.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Polymer Science
Jiufu Zhu, Shizhang Li, Dacheng Bai, Dongye Pan, Jiawei Zou, Yan Zheng, Bowen Zhang, Xiaojuan Hao, Wei Wang, Zuosen Shi, Zhanchen Cui
Summary: The growth of pentacene in organic thin-film transistors is effectively modulated by introducing aromatic rings in the gate insulating layer, resulting in improved film morphology and performance.
MACROMOLECULAR CHEMISTRY AND PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Praveena Rajput, Hitesh Kumar, Vinay Kumar Singh
Summary: In this study, the bottom-gate top-contact configuration of pentacene OTFTs was fabricated using two different dielectric layers. The effect of scaling the thickness of both PMMA and cross-linkable PVP polymer dielectrics on the subthreshold slope (SS) in top-contact pentacene OTFTs was investigated. Subthreshold slope improved significantly with the scaling of dielectric thicknesses.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Multidisciplinary
Nihat Akkan, Mustafa Altun, Herman Sedef
Summary: This study presents a behavioral compact model and its implementation for low-voltage pentacene-based organic thin film transistors (OTFTs) using the industry standard BSIM4 model and LTspice platform. The model parameters are simplified according to the device structure, and the BSIM4 mobility equation is adapted for OTFTs. Metaheuristics-based optimization is performed to extract the model parameters and fit the modified model to experimental data. The behavioral compact model is implemented in LTspice and validated for low-voltage pentacene-based OTFTs. Additionally, OTFT implementations of a Pseudo-E inverter, a Pseudo-E NAND gate, and a 1-bit full adder circuit are successfully simulated using the behavioral model.
ENGINEERING SCIENCE AND TECHNOLOGY-AN INTERNATIONAL JOURNAL-JESTECH
(2023)
Article
Materials Science, Multidisciplinary
Ruozheng Wang, Qiang Wei, Jie Li, Jiao Fu, Yiwei Liu, Tianfei Zhu, Cui Yu, Gang Niu, Shengli Wu, Hongxing Wang
Summary: In this study, bottom gate a-IGZO TFTs based on HfO2 stacked dielectrics with decent electrical characteristics and bias stability were fabricated. Through surface modification of the SiNx film, a more uniform layer was achieved, leading to improved quality of SHS stacked dielectrics. Zr-doped HfO2 was found to improve electrical characteristics and decrease bulk defect states, resulting in enhanced stability of the device.
Article
Engineering, Electrical & Electronic
Haiyang Gui, Bin Wei, Jun Wang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2015)
Article
Engineering, Electrical & Electronic
Xiong Chen, Haiyang Gui, Bin Wei, Jun Wang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2015)
Article
Materials Science, Multidisciplinary
Xiong Chen, Xicheng Wei, Hao Zhang, Jun Wang
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2017)
Article
Chemistry, Physical
Yu Zhang, Xicheng Wei, Hao Zhang, Xiong Chen, Jun Wang
APPLIED SURFACE SCIENCE
(2018)
Article
Materials Science, Multidisciplinary
Haiyang Gui, Bin Wei, Jianhua Zhang, Jun Wang
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2014)
Article
Physics, Multidisciplinary
Zhu Zong-Peng, Wei Bin, Zhang Jian-Hua, Wang Jun
Article
Nanoscience & Nanotechnology
Haiyang Gui, Zongpeng Zhu, Bin Wei, Jun Wang
Article
Materials Science, Multidisciplinary
Haiyang Gui, Bin Wei, Jun Wang
ORGANIC ELECTRONICS
(2014)
Article
Materials Science, Multidisciplinary
Zongpeng Zhu, Bin Wei, Jun Wang
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2014)
Article
Materials Science, Multidisciplinary
Yulei Hu, Wen Gu, Na Liu, Zongpeng Zhu, Jianhua Zhang, Jun Wang
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2013)
Article
Chemistry, Multidisciplinary
Yu Zhang, Xiong Chen, Hao Zhang, Xicheng Wei, Xiangfeng Guan, Yonghua Wu, Shaozu Hu, Jiale Zheng, Guidong Wang, Jiawen Qiu, Jun Wang
APPLIED SCIENCES-BASEL
(2020)
Article
Chemistry, Multidisciplinary
Yu Zhang, Xiong Chen, Hao Zhang, Shaozu Hu, Guohong Zhao, Meifang Zhang, Wei Qin, Zhaohua Wang, Xiaowei Huang, Jun Wang
Summary: In this paper, a new exfoliation method for MoS2 nanoflakes is proposed, which involves thermal treatment followed by precooling to improve the size and yield of the obtained flakes. A field-effect transistor fabricated based on MoS2 prepared using this new process exhibited typical depleted-FET performance, with a high on/off ratio of approximately 10(5) and a field-effect mobility of 24.26 cm(2)/Vs. This suggests that the new process may have potential for standard preparation of MoS2 and other 2D materials.
FRONTIERS IN CHEMISTRY
(2021)
Article
Materials Science, Multidisciplinary
Yuke Mao, Saisai Chen, Guidong Wang, Hao Zhang, Yu Zhang, Xiong Chen, Jun Wang
Summary: In this study, field-effect transistors (FET) based on multilayer MoS2 nanoflakes were fabricated using PVP as a modified layer. The use of PVP surface led to an enlarged nanoflake size and improved device performance, such as an increase in on-state current and enhanced field-effect mobility.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Hao Zhang, Xiong Chen, Jun Wang, Yu Zhang, Guidong Wang, Yuke Mao, Zhaohua Wang, Yingying Zhang, Rujian Gu, Mingyi Zhao
Summary: Solvent-assisted method improves the quality and yield of two-dimensional nanoflakes by overcoming the impact of wrinkles and defects through capillary and diffusion forces. It provides a universal path for the preparation of 2D nanoflakes, supporting the study of 2D materials and devices.
JOURNAL OF MATERIALS SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Saisai Chen, Yuke Mao, Guidong Wang, Hao Zhang, Yu Zhang, Xiong Chen, Rujian Gu, Mingyi Zhao, Jun Wang
Summary: We report a method to improve the charge-injection properties of MoS2-based FETs by introducing an organic buffer layer. The FETs with the organic buffer layer showed a ten-fold enhancement in on-state current and a four-fold increase in field-effect mobility compared to conventional devices. These improvements are attributed to the optimized contact properties resulting from the introduction of the organic buffer layer with hole-type.
Article
Materials Science, Multidisciplinary
Jinfei Dai, Chenjing Zhao, Jie Xu, Hossein Roshan, Hua Dong, Francesco Di Stasio, Fang Yuan, Bo Jiao, Zhaoxin Wu
Summary: In this study, the performance of perovskite nanocrystal light emitting diodes (PNC-LEDs) was enhanced through rational device structure design and the application of high-performance perovskite nanocrystal emitting layers.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Jia-Hua Yeh, Suhendro Purbo Prakoso, Leon Lukhas Santoso, Shi-Ju Chen, Bryan Chiang, Ju-Chieh Cheng, Ru-Ning Zhang, Yu-Cheng Chiu
Summary: This study demonstrates the application of a renewable material called dextrin-SMS in the production of electret filters and transistor memory. Dextrin-SMS material can maintain prolonged electrostatic charges and has a relatively wide memory window, making it suitable for the production of biodegradable face masks and green electronics.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Ahmad Telfah, Qais M. Al-Bataineh, Ahmad A. Ahmad, Rund Abu-Zurayk, Carlos J. Tavares, Johannes Etzkorn, Farzad Foadian
Summary: Polyacrylic acid complexed with polyaniline (PAA/PANI) composite materials have the potential to form organic mixed ion-electron conductive (OMIEC) films, which can be used in optoelectronic and energy storage applications. The composite films are formed through an acid-base reaction, resulting in strong electrostatic interactions and intermolecular hydrogen bonds between PANI and PAA. The separation of PANI-rich domains from PAA-rich matrix in the composite films is observed. The electrical conductivity of the composite films is higher when the content of PANI is 33 wt%, due to the high ionic-electronic coupling at the interface between phase-separated regions.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Min-Chih Hou, Dian Luo, Yu-Ting Huang, Shun-Wei Liu, Chin-Wei Lu, Chih-Hao Chang, Hai-Ching Su
Summary: Light-emitting electrochemical cells (LECs) have great potential for novel emission applications, but their relatively low device efficiency hinders their competitiveness with other emission technologies. A study finds that increasing the concentration of small TiO2 nano-particles in the diffuser film can enhance light extraction and improve the device efficiency of LECs.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Qiaoli Niu, Yao Xu, Jun Yang, Wei Hua, Baoxiang Chai, Zequan Zhang, Yuhui Ma, Wenjin Zeng, Ana Flavia Nogueira, Ruidong Xia
Summary: By introducing CPB as a defect passivation agent in the perovskite precursor solution, the optoelectronic properties of perovskite films can be significantly improved and non-radiative carrier recombination can be effectively suppressed. CPB-modified perovskite solar cells exhibit lower trap-state density and stronger carrier migration capability, leading to enhanced power conversion efficiency and stability.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Hulya Ozturk Dogan, Fatma Yildirim, Zeynep Orhan, Ali Ben Ahmed, Mostefa Benhaliliba, Sakir Aydogan
Summary: In this study, efficient self-powered visible and UV photodetectors based on hybrid organic-inorganic materials were demonstrated. The photodetectors showed excellent UV detecting capability and good photoresponsivity.
ORGANIC ELECTRONICS
(2024)