Top-gate-type ambipolar organic field-effect transistors with indium–tin oxide drain/source electrodes using polyfluorene derivatives

Published 2009 View Full Article

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Title
Top-gate-type ambipolar organic field-effect transistors with indium–tin oxide drain/source electrodes using polyfluorene derivatives
Authors
Keywords
-
Journal
ORGANIC ELECTRONICS
Volume 11, Issue 4, Pages 509-513
Publisher
Elsevier BV
Online
2009-12-12
DOI
10.1016/j.orgel.2009.12.004

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