Top-gate-type ambipolar organic field-effect transistors with indium–tin oxide drain/source electrodes using polyfluorene derivatives

标题
Top-gate-type ambipolar organic field-effect transistors with indium–tin oxide drain/source electrodes using polyfluorene derivatives
作者
关键词
-
出版物
ORGANIC ELECTRONICS
Volume 11, Issue 4, Pages 509-513
出版商
Elsevier BV
发表日期
2009-12-12
DOI
10.1016/j.orgel.2009.12.004

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