Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
Authors
Keywords
-
Journal
OPTICS LETTERS
Volume 39, Issue 2, Pages 379
Publisher
The Optical Society
Online
2014-01-14
DOI
10.1364/ol.39.000379
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique
- (2013) M. Athanasiou et al. APPLIED PHYSICS LETTERS
- Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
- (2013) Giovanni Verzellesi et al. JOURNAL OF APPLIED PHYSICS
- Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
- (2013) Yiyun Zhang et al. JOURNAL OF APPLIED PHYSICS
- Observation of Absorption-Dominated Bonding Dark Plasmon Mode from Metal–Insulator–Metal Nanodisk Arrays Fabricated by Nanospherical-Lens Lithography
- (2012) Yun-Chorng Chang et al. ACS Nano
- Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography
- (2012) Tongbo Wei et al. APPLIED PHYSICS LETTERS
- Fabrication of SiN_x-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography
- (2012) Kyeong-Jae Byeon et al. OPTICS EXPRESS
- Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography
- (2011) K. H. Li et al. JOURNAL OF APPLIED PHYSICS
- High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate
- (2010) Hung-Wen Huang et al. APPLIED PHYSICS LETTERS
- High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals
- (2010) Elison Matioli et al. APPLIED PHYSICS LETTERS
- Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
- (2010) X. Ni et al. JOURNAL OF APPLIED PHYSICS
- Analysis of Improved Efficiency of InGaN Light-Emitting Diode With Bottom Photonic Crystal Fabricated by Anodized Aluminum Oxidxe
- (2009) Sang-Wan Ryu et al. ADVANCED FUNCTIONAL MATERIALS
- Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates
- (2009) Y. Yang et al. APPLIED PHYSICS LETTERS
- Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes
- (2009) Chun-Feng Lai et al. APPLIED PHYSICS LETTERS
- Auger recombination rates in nitrides from first principles
- (2009) Kris T. Delaney et al. APPLIED PHYSICS LETTERS
- Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal
- (2008) Min-Ki Kwon et al. APPLIED PHYSICS LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search