A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

Published 2009 View Full Article

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Title
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages 102115
Publisher
AIP Publishing
Online
2009-03-14
DOI
10.1063/1.3097245

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