Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

(2008) C. H. Chiu et al.   APPLIED PHYSICS LETTERS

Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

(2008) Hung-Cheng Lin et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Stress Reduction and Enhanced Extraction Efficiency of GaN-Based LED Grown on Cone-Shape-Patterned Sapphire

(2008) Jae-Hoon Lee et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

(2008) Haiyong Gao et al.   JOURNAL OF APPLIED PHYSICS

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

(2008) H W Huang et al.   NANOTECHNOLOGY