Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001¯)

(2010) S. E. Harrison et al.   APPLIED PHYSICS LETTERS

Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

(2010) Joshua A. Kellar et al.   APPLIED PHYSICS LETTERS

AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC

(2010) Gyan Prakash et al.   CARBON

Insights into few-layer epitaxial graphene growth on4H-SiC(0001¯)substrates from STM studies

(2009) Laura B. Biedermann et al.   PHYSICAL REVIEW B

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Raman spectra of epitaxial graphene on SiC(0001)

(2008) J. Röhrl et al.   APPLIED PHYSICS LETTERS

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

(2008) Luxmi et al.   JOURNAL OF ELECTRONIC MATERIALS

Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2

(2008) Dong Su Lee et al.   NANO LETTERS

Pit formation during graphene synthesis on SiC(0001):In situelectron microscopy

(2008) J. B. Hannon et al.   PHYSICAL REVIEW B