High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

Published 2008 View Full Article

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Title
High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric
Authors
Keywords
-
Journal
NEW JOURNAL OF PHYSICS
Volume 10, Issue 10, Pages 103019
Publisher
IOP Publishing
Online
2008-10-17
DOI
10.1088/1367-2630/10/10/103019

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