期刊
NEW JOURNAL OF PHYSICS
卷 10, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/10/10/103019
关键词
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资金
- Finnish Funding Agency for Technology and Innovation (TEKES) [40309/05]
- Academy of Finland
- Magnus Ehrnrooth Foundation
- [Finnish Foundation for Technology Promotion (TES)]
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO2 and TiO2 in a triple-layer configuration, we achieve to our knowledge the first CNT FETs with consistent and narrowly distributed memory effects in their transfer characteristics. The study includes 94 CNT FET samples, providing a good basis for statistics on the hysteresis seen in five different CNT-gate configurations.
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