Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

Published 2015 View Full Article

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Title
Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications
Authors
Keywords
Si, 3, N, 4, -based RRAM, Resistive switching, Abrupt reset, Gradual reset, Multi-level cell (MLC), Space-charge-limited current (SCLC)
Journal
SOLID-STATE ELECTRONICS
Volume 114, Issue -, Pages 94-97
Publisher
Elsevier BV
Online
2015-09-07
DOI
10.1016/j.sse.2015.08.003

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