4.6 Article

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

Journal

NANOTECHNOLOGY
Volume 23, Issue 37, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/37/375202

Keywords

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Funding

  1. National Science Foundation [ECCS0846018, ECCS0824186]
  2. National Natural Science Foundation of China NSFC [20836005]
  3. NSFC [61078007]
  4. Shanghai Municipal Education Commission
  5. Shanghai Education Development Foundation [10SG46]
  6. Science and Technology Commission of Shanghai Municipality [1052nm07100, 11530502200]
  7. Program for New Century Excellent Talents in University
  8. Div Of Electrical, Commun & Cyber Sys
  9. Directorate For Engineering [0846818] Funding Source: National Science Foundation
  10. Div Of Electrical, Commun & Cyber Sys
  11. Directorate For Engineering [0824186] Funding Source: National Science Foundation

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PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412 nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

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