☆ 4.6 Article

Near-infrared quantum dot light emitting diodes employing electron transport nanocrystals in a layered architecture

NANOTECHNOLOGY (2012)

期刊

NANOTECHNOLOGY

卷 23, 期 37, 页码 -

出版社

IOP PUBLISHING LTD

DOI: 10.1088/0957-4484/23/37/375202

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-

类别

Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied

资金

National Science Foundation [ECCS0846018, ECCS0824186]
National Natural Science Foundation of China NSFC [20836005]
NSFC [61078007]
Shanghai Municipal Education Commission
Shanghai Education Development Foundation [10SG46]
Science and Technology Commission of Shanghai Municipality [1052nm07100, 11530502200]
Program for New Century Excellent Talents in University
Div Of Electrical, Commun & Cyber Sys
Directorate For Engineering [0846818] Funding Source: National Science Foundation
Div Of Electrical, Commun & Cyber Sys
Directorate For Engineering [0824186] Funding Source: National Science Foundation

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摘要

PbSe quantum dot light emitting diodes (QD-LEDs) of a multi-layer architecture are reported in the present work to exhibit high external quantum efficiencies. In these devices, a ligand replacement technique was employed to activate PbSe QDs, and ZnO nanoparticles were used for the electron transport layer. The emission wavelength of this solution processed device is QD size tunable over a broad spectral range, and an LED efficiency of 0.73% was measured at 1412 nm. Higher efficiencies at longer wavelengths are also inferred from spectral characterization.

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