Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles

GaN nanowire surface state observed using deep level optical spectroscopy

(2010) A. Armstrong et al.   APPLIED PHYSICS LETTERS

ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

(2010) Y. H. Leung et al.   APPLIED PHYSICS LETTERS

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

(2010) N. A. Sanford et al.   JOURNAL OF APPLIED PHYSICS

Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter

(2009) Hsin-Yi Chen et al.   APPLIED PHYSICS LETTERS

Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction

(2009) Chih-Han Chen et al.   CHEMICAL PHYSICS LETTERS

Deep level optical spectroscopy of GaN nanorods

(2009) A. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Surface-Induced Transients in Gallium Nitride Nanowires

(2009) B. S. Simpkins et al.   Journal of Physical Chemistry C

Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction

(2008) Zhen Guo et al.   APPLIED PHYSICS LETTERS

Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

(2008) Young S. Park et al.   JOURNAL OF APPLIED PHYSICS

Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells

(2008) Y. B. Tang et al.   NANO LETTERS