Nanoscale memory devices

Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory

(2011) Su-Youn Lee et al.   Journal of Semiconductor Technology and Science

Core Circuit Technologies for PN-Diode-Cell PRAM

(2011) Hee-Bok Kang et al.   Journal of Semiconductor Technology and Science

Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

(2011) Youn-Jung Park et al.   Journal of Semiconductor Technology and Science

Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

(2009) L. Liao et al.   ACS Nano

Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes

(2009) Jun Yao et al.   ACS Nano

Phase Change Materials

(2009) Simone Raoux   Annual Review of Materials Research

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

(2009)   APPLIED PHYSICS LETTERS

Electrochemical fabrication and magnetization properties of CoCrPt nanowires and nanotubes

(2009) S. Shamaila et al.   APPLIED PHYSICS LETTERS

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

Sn12Sb88 material for phase change memory

(2009) Feng Rao et al.   APPLIED PHYSICS LETTERS

Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices

(2009) Mei Yin Chan et al.   CARBON

Fabrication and Characterization of Interconnected Nanowell Molecular Electronic Devices in Crossbar Architecture

(2009) Z.L. Martin et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Fault Secure Encoder and Decoder for NanoMemory Applications

(2009) H. Naeimi et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Synthesis and characterization of ferroelectric SrBi2Ta2O9 nanotubes arrays

(2009) Ming Feng et al.   JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY

Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe

(2009) Suyoun Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

(2009) Marcus Rinkiö et al.   NANO LETTERS

Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor

(2009) Wangyang Fu et al.   NANO LETTERS

Ferroelectrics at the nanoscale

(2009) J. M. Gregg   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Two generations of phase-change memory devices: Differences and common problems

(2009) Anatoly Popov   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

N-type behavior of ferroelectric-gate carbon nanotube network transistor

(2008) Jun Wei Cheah et al.   APPLIED PHYSICS LETTERS

Conformal oxide coating of carbon nanotubes

(2008) S. Kawasaki et al.   APPLIED PHYSICS LETTERS

Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

(2008) Hiroshi Ishiwara   CURRENT APPLIED PHYSICS

Germanium Antimonide Phase-Change Nanowires for Memory Applications

(2008) Xuhui Sun et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Chalcogenide-Nanowire-Based Phase Change Memory

(2008) Bin Yu et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)

(2008) Jeong Hwan Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nanotube-based data storage devices

(2008) Elena Bichoutskaia et al.   Materials Today

Phase change materials and their application to random access memory technology

(2008) Simone Raoux et al.   MICROELECTRONIC ENGINEERING

Design and Analysis of Nanotube-Based Memory Cells

(2008) Shaoping Xiao et al.   Nanoscale Research Letters

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Magnetoresistive Random Access Memory: The Path to Competitiveness and Scalability

(2008) Jian-Gang Zhu   PROCEEDINGS OF THE IEEE

Current-Controlled Magnetic Domain-Wall Nanowire Shift Register

(2008) M. Hayashi et al.   SCIENCE

NEMS switch with 30nm-thick beam and 20nm-thick air-gap for high density non-volatile memory applications

(2008) Weon Wi Jang et al.   SOLID-STATE ELECTRONICS

Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices

(2007) Se-Ho Lee et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Size effects in nanoscale ferroelectrics

(2006) A. Rüdiger et al.   JOURNAL OF ALLOYS AND COMPOUNDS