Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe

Title
Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe
Authors
Keywords
-
Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 156, Issue 7, Pages H612
Publisher
The Electrochemical Society
Online
2009-05-22
DOI
10.1149/1.3133252

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