4.6 Article

Nanolithography using spin-coatable ZrO2 resist and its application to sub-10 nm direct pattern transfer on compound semiconductors

Journal

NANOTECHNOLOGY
Volume 19, Issue 15, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/19/15/155303

Keywords

-

Ask authors/readers for more resources

A typical method for sub-micrometer compound semiconductor dry etching utilizes polymethylmethacrylate ( PMMA) to transfer patterns to SiO2 as intermediate masks, which limits its ability to obtain etching resolutions approaching sub-10 nm. We report a new approach for direct sub-10 nm pattern transfer using sol-gel derived spin-coatable ZrO2 resist as the mask. The optimal dose of ZrO2 resist is similar to 160 mC cm(-2). The sample InP compound semiconductor etching selectivity to ZrO2 is over 13:1, with high aspect ratio of 35:1. The smallest etching feature is 9 nm. These results will be very useful for realizing various challenging nanoscale photonic and electronic devices and circuits.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available