DFT coupled with NEGF study of a promising two-dimensional channel material: black phosphorene-type GaTeCl

Single-Layer Tl2O: A Metal-Shrouded 2D Semiconductor with High Electronic Mobility

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GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement

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Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator

(2017) Shengli Zhang et al.   NANO LETTERS

High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

(2017) Agnieszka Kuc et al.   Advanced Electronic Materials

Rise of silicene: A competitive 2D material

(2016) Jijun Zhao et al.   PROGRESS IN MATERIALS SCIENCE

MoS2 transistors with 1-nanometer gate lengths

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Semi-metallic Be5C2 monolayer global minimum with quasi-planar pentacoordinate carbons and negative Poisson’s ratio

(2016) Yu Wang et al.   Nature Communications

Performance of arsenene and antimonene double-gate MOSFETs from first principles

(2016) Giovanni Pizzi et al.   Nature Communications

MnPSe3Monolayer: A Promising 2D Visible-Light Photohydrolytic Catalyst with High Carrier Mobility

(2016) Xu Zhang et al.   Advanced Science

Highly Efficient Photothermal Effect by Atomic-Thickness Confinement in Two-Dimensional ZrNCl Nanosheets

(2015) Feng Feng et al.   ACS Nano

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

(2015) Shengli Zhang et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Structural and Electronic Properties of Layered Arsenic and Antimony Arsenide

(2015) Liangzhi Kou et al.   Journal of Physical Chemistry C

Electron-Transport Properties of Few-Layer Black Phosphorus

(2015) Yuehua Xu et al.   Journal of Physical Chemistry Letters

Quantum spin hall insulators in strain-modified arsenene

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Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study

(2015) Zhen Zhu et al.   PHYSICAL REVIEW B

Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

(2015) C. Kamal et al.   PHYSICAL REVIEW B

Strain-driven band inversion and topological aspects in Antimonene

(2015) Mingwen Zhao et al.   Scientific Reports

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

(2014) Han Liu et al.   ACS Nano

Be2C Monolayer with Quasi-Planar Hexacoordinate Carbons: A Global Minimum Structure

(2014) Yafei Li et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Half-Metallicity in MnPSe3 Exfoliated Nanosheet with Carrier Doping

(2014) Xingxing Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Atomic Resolution Imaging and Topography of Boron Nitride Sheets Produced by Chemical Exfoliation

(2010) Jamie H. Warner et al.   ACS Nano

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Large-Scale Fabrication of Boron Nitride Nanosheets and Their Utilization in Polymeric Composites with Improved Thermal and Mechanical Properties

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