4.8 Article

Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires

Journal

NANO LETTERS
Volume 18, Issue 8, Pages 4949-4956

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01782

Keywords

InAs nanowire; strain mapping; piezoresistance; transmission electron microscopy

Funding

  1. Swedish Research Council (VR) [2016-04618]
  2. U.S. Office of Naval Research [N00014-17-1-2283]
  3. U.S. Department of Energy [DE-AC02-05CH11231]
  4. Microsoft Quantum
  5. European Research Council (ERC) [716655]
  6. Swedish Research Council [2016-04618] Funding Source: Swedish Research Council

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Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice strain of individual InAs nanowires passivated with a thin epitaxial In0.6Ga0.4As shell. With an in situ electron microscopy electromechanical testing technique, we show that the piezoresistive response of the nanowires is greatly enhanced compared to bulk InAs, and that uniaxial elastic strain leads to increased conductivity, which can be explained by a strain-induced reduction m the band gap. In addition, we observe mhomogeneity m strain distribution, which could have a reverse effect on the conductivity by increasing the scattering of charge carriers. These results provide a direct correlation of nanoscale mechanical strain and electrical transport properties in free-standing nanostructures.

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