On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

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Title
On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment
Authors
Keywords
ISFET, H, 2, O, 2, surface treatment, pH sensor, Interference effect
Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 209, Issue -, Pages 658-663
Publisher
Elsevier BV
Online
2014-12-13
DOI
10.1016/j.snb.2014.12.025

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