On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

出版年份 2015 全文链接

标题

作者

关键词

ISFET, H, 2, O, 2, surface treatment, pH sensor, Interference effect

出版物

Volume 209, Issue -, Pages 658-663

出版商

Elsevier BV

发表日期

2014-12-13

DOI

10.1016/j.snb.2014.12.025

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